PART |
Description |
Maker |
CMFD2004ITR13LEADFREE |
0.225 A, 300 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
CENTRAL SEMICONDUCTOR CORP
|
RSZ5229BT116 RSZ5249BT116 RSZ5222BT216 |
0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
|
|
BD2004S-13 |
0.225 A, 300 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
DIODES INC
|
VTV-300-4 VTV-300-2 |
30 W, 25 V, 175-225 MHz, silicon NPN transistor
|
Acrian
|
M306N0FGTFP M306N0MCT |
60 W / 225 to 400 MHz CONTROLLED Q BROADBAND RF POWER TRANSISTOR NPN SILICON 60 W, 225 to 400 MHz CONTROLLED Q BROADBAND RF POWER TRANSISTOR NPN SILICON 60 W, 225 to 400 MHz CONTROLLED Q?BROADBAND RF POWER TRANSISTOR NPN SILICON
|
Tyco Electronics
|
MMBD3004S MMBD3004S-7 MMBD3004 MMBD3004S- |
HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE 0.225 A, 350 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Diodes, Inc. DIODES[Diodes Incorporated] http://
|
MCR106-6G MCR106-8G MCR106-8 MCR106 MCR106-6 MCR10 |
Sensitive Gate Silicon Controlled Rectifier; Package: TO-225; No of Pins: 3; Container: Bulk; Qty per Container: 500 4 A, 600 V, SCR, TO-225AA SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
|
ONSEMI[ON Semiconductor]
|
NHP-250 |
High Pass Filter 50Ω 225 to 3000 MHz High Pass Filter 50惟 225 to 3000 MHz High Pass Filter 50ヘ 225 to 3000 MHz
|
Mini-Circuits
|
VC120605D150D VA100026D580D |
DIODE SUPPRESS SMD GR1206 UNIDIR 5.6V DIODE SUPPRESS AXIAL/BIPOL 26V MAX120A 二极管抑制轴双极26V的MAX120A
|
International Components, Corp.
|
BDS11CECC BDS12CECC BDS10SMD-JQR-BR4 |
DIODE TVS 7.0V 600W UNI-DIR SM DIODE TVS 75V 600W UNIDIR 5% SMB 15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-276AB
|
SEMELAB LTD
|
WM2617CD WM2617 WM2617ID |
From old datasheet system DUAL 10-BIT SERIAL INPUT VOLTAGE DAC Dual 10-Bit Serial DAC with Power Down TVS UNIDIR 600W 8.5W SMB
|
WOLFSON[Wolfson Microelectronics plc]
|